Intel Looking for Gallium Arsenide DeviceV
Intelhas not yet found a low-leakage device, according to Paolo Gargini,Intel Fellow, ITRS chairman and group director of Intel's technology andmanufacturing group.
Intel'starget is to achieve a one to two orders of magnitude in power savingand accepting an order of magnitude reduction in speed.
"We have until 2025 to get it all cleaned up," says Gargini, "2021 would be better."
So,for the next decade, scaling is still alive. "We can continue toproceed at historical rates in the next decade," says Gargini, "10nm isnot the end." But, for 1nm, 2nm or 3nm, something entirely new will beneeded.
Thelast 20 years has been spent in overcoming the limitations of siliconby introducing innovations such as strained silicon, high k metal gate,raised source and drain and EUV, each of which took between 11 and 16years to introduce.
But now: "We are approaching the fundamental limits of available materials," says Gargini.
Intelis currently pursuing a wide range of options for the post silicon age.One is III-V options like indium gallium arsenide QWFETs, another istunnel diodes.