SanDisk
Corporation (NASDAQ:SNDK),
a global leader in flash storage solutions, today announced that it has
successfully developed its 48 layer second generation 3D NAND, also
referred to as BiCS2. Pilot production will commence as planned in the
second half of 2015 in the Yokkaichi joint venture facility, with
meaningful commercial production targeted for 2016.
“We are very pleased to announce our second generation 3D NAND, which is
a 48 layer architecture developed with our partner Toshiba,” said Dr.
Siva Sivaram, executive vice president, memory technology, SanDisk. “We
utilized our first generation 3D NAND technology as a learning vehicle,
enabling us to develop our commercial second generation 3D NAND, which
we believe will deliver compelling storage solutions for our customers.”
SanDisk plans to use the second generation 3D NAND technology across a
broad range of solutions, from removable products to enterprise SSDs.
About SanDisk
SanDisk Corporation (NASDAQ: SNDK), a Fortune 500 and S&P 500 company,
is a global leader in flash storage solutions. For more than 25 years,
SanDisk has expanded the possibilities of storage, providing trusted and
innovative products that have transformed the electronics industry.
Today, SanDisk’s quality, state-of-the-art solutions are at the heart of
many of the world's largest data centers, and embedded in advanced smart
phones, tablets and PCs. SanDisk’s consumer products are available at
hundreds of thousands of retail stores worldwide. For more information,
visit www.sandisk.com.
© 2015 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk
logo are trademarks of SanDisk Corporation, registered in the United
States and other countries. Other brand names mentioned herein are for
identification purposes only and may be the trademarks of their
respective holder(s).
This news release contains certain forward-looking statements, including
expectations for 3D NAND technology, including its development,
production and timing and location thereof, capabilities, performance
and use, that are based on our current expectations and involve numerous
risks and uncertainties that may cause these forward-looking statements
to be inaccurate. Risks that may cause these forward-looking statements
to be inaccurate include among others: our 3D NAND technology or our
solutions utilizing this new technology may not be available when we
expect or perform as expected; we may experience difficulties or delays
in developing, producing or ramping with acceptable yields 3D NAND
technology, including as a result of construction difficulties or delays
or failure to manage other risks associated with our ventures and
strategic partnerships with Toshiba; or the other risks detailed from
time-to-time in our Securities and Exchange Commission filings and
reports, including, but not limited to, our most recent annual report on
Form 10-K. We do not intend to update the information contained in this
news release.
Copyright Business Wire 2015